Nanolithography.  The Electron Beam Lithography Facility at the Institute for Electronics and Nanotechnology of the Georgia Institute of Technology.Georgia Institute of TechnologyInstitute for Electronics and Nanotechnology
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    substrate = silicon piece
    coat maN-2403, 4000 RPM, 2000 RPM/s, 60 sec
    hot plate bake, 90 C, 1 min
    coated 2/1/11

    thickness = 291.417 nm +/- 0.03
    MSE = 3.496

    Cauchy
    A = 1.5839
    B = 0.014289
    C = -5.1175e-005

    nm n
    400 1.67120723
    405 1.66911265
    410 1.66709196
    415 1.66514175
    420 1.6632588
    425 1.66144009
    430 1.65968274
    435 1.65798405
    440 1.65634146
    445 1.65475253
    450 1.65321498
    455 1.65172663
    460 1.65028541
    465 1.64888936
    470 1.64753664
    475 1.64622548
    480 1.64495419
    485 1.6437212
    490 1.64252499
    495 1.64136411
    500 1.6402372
    505 1.63914295
    510 1.63808012
    515 1.63704752
    520 1.63604402
    525 1.63506855
    530 1.63412007
    535 1.63319761
    540 1.63230022
    545 1.631427
    550 1.63057711
    555 1.62974972
    560 1.62894405
    565 1.62815935
    570 1.62739489
    575 1.62665
    580 1.625924
    585 1.62521628
    590 1.62452622
    595 1.62385325
    600 1.6231968
    605 1.62255634
    610 1.62193136
    615 1.62132137
    620 1.62072589
    625 1.62014446
    630 1.61957665
    635 1.61902204
    640 1.61848023
    645 1.61795082
    650 1.61743343
    655 1.61692772
    660 1.61643333
    665 1.61594993
    670 1.61547719
    675 1.6150148
    680 1.61456247
    685 1.61411991
    690 1.61368683
    695 1.61326298
    700 1.61284808
    705 1.6124419
    710 1.61204418
    715 1.6116547
    720 1.61127323
    725 1.61089955
    730 1.61053346
    735 1.61017474
    740 1.6098232
    745 1.60947866
    750 1.60914093
    755 1.60880983
    760 1.60848518
    765 1.60816683
    770 1.60785461
    775 1.60754836
    780 1.60724794
    785 1.60695319
    790 1.60666398
    795 1.60638017
    800 1.60610162
Electron Beam Lithography Facility
Institute for Electronics and Nanotechnology, Georgia Institute of Technology