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Ellipsometry can be used to obtain index of refraction, absorption, and thickness of a thin film.
substrate = 4" silicon wafer
resist = 950k MW PMMA A4
spin
static puddle dispense
5000 RPM, 2000 RPM/s, 60sec
180 C hotplate bake, 90 sec
thickness = 150.45nm +/- 0.0127
MSE = 1.567
Cauchy
A = 1.4783
B = 0.0031969
C = 0.00024606
Index of refraction table
nm n
400 1.5079
410 1.506
420 1.5043
430 1.5028
440 1.5014
450 1.5001
460 1.4989
470 1.4978
480 1.4968
490 1.4959
500 1.495
510 1.4942
520 1.4935
530 1.4928
540 1.4922
550 1.4916
560 1.491
570 1.4905
580 1.49
590 1.4895
600 1.4891
610 1.4887
620 1.4883
630 1.4879
640 1.4876
650 1.4872
660 1.4869
670 1.4866
680 1.4864
690 1.4861
700 1.4858
710 1.4856
720 1.4854
730 1.4852
740 1.485
750 1.4848
760 1.4846
770 1.4844
780 1.4842
790 1.4841
800 1.4839
810 1.4837
820 1.4836
830 1.4835
840 1.4833
850 1.4832
860 1.4831
870 1.483
880 1.4828
890 1.4827
900 1.4826
910 1.4825
920 1.4824
930 1.4823
940 1.4822
950 1.4821
960 1.4821
970 1.482
980 1.4819
990 1.4818
1000 1.4817
1010 1.4817
1020 1.4816
1030 1.4815
1040 1.4815
1050 1.4814
1060 1.4813
1070 1.4813
1080 1.4812
1090 1.4812
1100 1.4811
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