Nanolithography.  The Electron Beam Lithography Facility at the Institute for Electronics and Nanotechnology of the Georgia Institute of Technology.Georgia Institute of TechnologyInstitute for Electronics and Nanotechnology
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    substrate = 4" silicon wafer
    resist = 950k MW PMMA A4
    spin
    static puddle dispense
    5000 RPM, 2000 RPM/s, 60sec
    180 C hotplate bake, 90 sec

    thickness = 150.45nm +/- 0.0127
    MSE = 1.567

    Cauchy
    A = 1.4783
    B = 0.0031969
    C = 0.00024606

    Index of refraction table
    nm n
    400 1.5079
    410 1.506
    420 1.5043
    430 1.5028
    440 1.5014
    450 1.5001
    460 1.4989
    470 1.4978
    480 1.4968
    490 1.4959
    500 1.495
    510 1.4942
    520 1.4935
    530 1.4928
    540 1.4922
    550 1.4916
    560 1.491
    570 1.4905
    580 1.49
    590 1.4895
    600 1.4891
    610 1.4887
    620 1.4883
    630 1.4879
    640 1.4876
    650 1.4872
    660 1.4869
    670 1.4866
    680 1.4864
    690 1.4861
    700 1.4858
    710 1.4856
    720 1.4854
    730 1.4852
    740 1.485
    750 1.4848
    760 1.4846
    770 1.4844
    780 1.4842
    790 1.4841
    800 1.4839
    810 1.4837
    820 1.4836
    830 1.4835
    840 1.4833
    850 1.4832
    860 1.4831
    870 1.483
    880 1.4828
    890 1.4827
    900 1.4826
    910 1.4825
    920 1.4824
    930 1.4823
    940 1.4822
    950 1.4821
    960 1.4821
    970 1.482
    980 1.4819
    990 1.4818
    1000 1.4817
    1010 1.4817
    1020 1.4816
    1030 1.4815
    1040 1.4815
    1050 1.4814
    1060 1.4813
    1070 1.4813
    1080 1.4812
    1090 1.4812
    1100 1.4811
Electron Beam Lithography Facility
Institute for Electronics and Nanotechnology, Georgia Institute of Technology