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Ellipsometry can be used to obtain index of refraction, absorption, and thickness of a thin film.
ZEP520A on bare silicon
4000RPM, 2000RPM/s, 60sec
180C hotplate bake 2min
thickness = 345.543nm
Cauchy
A = 1.5437
B = 0.0033986
C = 0.00060366
nm n
400 1.58852172
410 1.58528047
420 1.58236615
430 1.57973781
440 1.57736053
450 1.57520438
460 1.57324365
470 1.57145613
480 1.56982262
490 1.56832642
500 1.56695296
510 1.56568953
520 1.56452496
530 1.56344945
540 1.56245434
550 1.56153197
560 1.56067556
570 1.55987909
580 1.55913719
590 1.55844506
600 1.55779843
610 1.55719343
620 1.55662663
630 1.5560949
640 1.55559546
650 1.55512575
660 1.5546835
670 1.55426662
680 1.55387321
690 1.55350157
700 1.55315012
710 1.55281744
720 1.55250221
730 1.55220325
740 1.55191946
750 1.55164982
760 1.55139342
770 1.5511494
780 1.55091698
790 1.55069543
800 1.55048409
810 1.55028234
820 1.5500896
830 1.54990535
840 1.54972909
850 1.54956037
860 1.54939875
870 1.54924385
880 1.5490953
890 1.54895275
900 1.54881588
910 1.54868439
920 1.548558
930 1.54843645
940 1.54831949
950 1.5482069
960 1.54809845
970 1.54799395
980 1.5478932
990 1.54779603
1000 1.54770226
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