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Information on nanometer scale etching: Metal Etching: Aluminum Etching Chrome Etching Silicon etching: These recipes are optimized for shallow (less than 1 micron depth) etching and smooth sidewalls. Silicon Etching with ZEP520A mask Silicon Etching with SiO2 hard mask Comparison of PMMA to ZEP520 for silicon ICP etching This recipe is for use with HSQ resist mask. 1 micron etch depth or more may be achieved with smooth sidewall and near 90 degree sidewall angle. Silicon ICP etching using HSQ negative tone resist These are "nano-Bosch" recipes. The cycle times have been made very short to reduce sidewall scalloping. These recipes have very high selectivity (usually greater than 20:1 silicon:resist), and thus high aspect ratio, with near 90 degree angle sidewall. The trade off however is increased sidewall roughness. nano-Bosch etching silicon with ZEP520A mask nano-Bosch etching silicon with PMMA mask This is a more standard Bosch recipe. In this report only 4 cycles were run and the scalloping appears quite large. Micron scale silicon Bosch etching with STS ICP Silicon dioxide etching: Silicon dioxide etching with STS AOE Silicon dioxide etching with PT ICP InSb etching: ICP etching nanometer scale patterns in InSb

Electron Beam Lithography Facility Institute for Electronics and Nanotechnology Georgia Institute of Technology