Nanolithography.  
		The Electron Beam Lithography Facility at the Institute for Electronics and Nanotechnology
		of the Georgia Institute of Technology.
      HOME    •   TRAINING    •   PROCESSES    •   LINKS    •   CONTACT

ZEP520A thickness vs. spin speed curves

    undiluted ZEP520A

      (1/y) = 1.259E-3 + (3.8E-8)x


    Anisole:ZEP520A 1:1 dilution

      3000 RPM, 1500RPM/s, 60sec on 4" wafer
      mean = 1264 A, sigma = 11 A, N = 6

    Anisole:ZEP520A 2:1 dilution

      (1/y) = 5.48E-4 + (1.38E-7)x


    Anisole:ZEP520A 3:1, 4:1 dilution

      3:1 solution curve fit: (1/y) = 9.63E-4 + (3.88E-7)x
      4:1 solution curve fit: (1/y) = 1.41E-3 + (5.82E-7)x


Electron Beam Lithography Facility
Institute for Electronics and Nanotechnology
Georgia Institute of Technology