Nanolithography.  
		The Electron Beam Lithography Facility at the Institute for Electronics and Nanotechnology
		of the Georgia Institute of Technology.
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ZEP520A Process

    1. 60sec spincoat ZEP520A (see ZEP520A spin speed curves)
    2. 180C hotplate for 2 min
    3. expose (base dose for greater than 1um features is 200uC/cm2)
    4. 2 min immersion develop Amyl Acetate
    5. rinse IPA

To remove ZEP520A:

    1. soak in n-methyl pyrrolidinone (AKA NMP, 1165 Remover) (~15min)

    OR

    2. O2 plasma
      40 sccm flow O2
      250 mTorr pressure
      300 W RIE RF power
      28 C plate temperature
      ZEP520A resist etch rate = 112 Ang/sec
      (e.g. 400nm of ZEP520 is etched in 35 sec, recommend additional ~15 sec overetch)

for metal liftoff process:

    1. soak in n-methyl pyrrolidinone (NMP) at 70C possibly up to 1hr (depends on features)
    (if you are getting large chunks floating around in your solution, you may need to move your sample to a second NMP bath to prevent metal from reattaching to the substrate)
    2. place in ultrasonic bath for 5 - 15 min

Electron Beam Lithography Facility
Institute for Electronics and Nanotechnology
Georgia Institute of Technology