Nanolithography.  The Electron Beam Lithography Facility at the Institute for Electronics and Nanotechnology of the Georgia Institute of Technology.Georgia Institute of TechnologyInstitute for Electronics and Nanotechnology
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    ZEP520A on bare silicon
    4000RPM, 2000RPM/s, 60sec
    180C hotplate bake 2min

    thickness = 345.543nm

    Cauchy
    A = 1.5437
    B = 0.0033986
    C = 0.00060366

    nm n
    400 1.58852172
    410 1.58528047
    420 1.58236615
    430 1.57973781
    440 1.57736053
    450 1.57520438
    460 1.57324365
    470 1.57145613
    480 1.56982262
    490 1.56832642
    500 1.56695296
    510 1.56568953
    520 1.56452496
    530 1.56344945
    540 1.56245434
    550 1.56153197
    560 1.56067556
    570 1.55987909
    580 1.55913719
    590 1.55844506
    600 1.55779843
    610 1.55719343
    620 1.55662663
    630 1.5560949
    640 1.55559546
    650 1.55512575
    660 1.5546835
    670 1.55426662
    680 1.55387321
    690 1.55350157
    700 1.55315012
    710 1.55281744
    720 1.55250221
    730 1.55220325
    740 1.55191946
    750 1.55164982
    760 1.55139342
    770 1.5511494
    780 1.55091698
    790 1.55069543
    800 1.55048409
    810 1.55028234
    820 1.5500896
    830 1.54990535
    840 1.54972909
    850 1.54956037
    860 1.54939875
    870 1.54924385
    880 1.5490953
    890 1.54895275
    900 1.54881588
    910 1.54868439
    920 1.548558
    930 1.54843645
    940 1.54831949
    950 1.5482069
    960 1.54809845
    970 1.54799395
    980 1.5478932
    990 1.54779603
    1000 1.54770226
Electron Beam Lithography Facility
Institute for Electronics and Nanotechnology, Georgia Institute of Technology