Nanolithography.  The Electron Beam Lithography Facility at the Institute for Electronics and Nanotechnology of the Georgia Institute of Technology.Georgia Institute of TechnologyInstitute for Electronics and Nanotechnology
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Positive Electron Beam Resists:

950 PMMA A2, A4, A7, A11

Negative Electron Beam Resists:

XR-1541 (HSQ, hydrogen silsequioxane)
ma-N 2403

Resist Proximity Effect Characterization Pattern:

    This Excel file can help you characterize the right dose you need to use for a given line width and spacing in your resist and substrate process.

    These two files, (file 1) and (file 2), are AutoCAD files you can use, if you would like to modify them for your own purposes.

Electron Beam Lithography Facility
Institute for Electronics and Nanotechnology, Georgia Institute of Technology