Positive Electron Beam Resists:

Zeon Chemicals Technical Report
process conditions
spin speed curves
dose vs. depth curve for 20x40um feature
Comparison of Resist Thickness to Sensitivity
required dose for 50, 80, 100nm diameter circles
ZEP520A base dose on different substrates
ZEP520 process monitor (04/25/2012)
Alignment Characterization(04/03/2012)
Optimization Research on ZEP520

Micro Chem Technical Report
process conditions
spin speed curves
dose vs. depth curve: 600nm PMMA on 1000A Si02

Micro Chem Technical Report

Negative Electron Beam Resists:

HSQ resist process
HSQ Spin Curve

determining base dose for HSQ for thickness 15 to 100 nm
HSQ optimization study using 6% HSQ and 2 nA beam current

dose-depth curves for different post apply bake conditions

dose-depth curves for different develop conditions

Study 1 for hot plate bake and oven bake.
Study 2 HSQ contrast


minimum 6.5 nm isolated line using diluted HSQ and 100 pA beam current
10 nm dots on 40 nm pitch using "dots on the fly" technique

subfield stitching errors in curved structures
ring structure comparison with Argonne
ring structure before/after blank amp and with Ming Lu (BNL) conversion

HSQ dose vs. CD for 60nm squares
HSQ thickness uniformity on 200mm silicon wafers

journal publication list of HSQ and EBL
journal publication list of HSQ material and chemical properties
journal publication list of miscellaneous work on HSQ

process
Micro Resist Technologies Technical Report
Micro Resists Technologies Poster
maN-2403 dose sensitivity curve

Resist Proximity Effect Characterization Pattern:

This Excel file can help you characterize the right dose you need to use for a given line width and spacing in your resist and substrate process.

These two files, (file 1) and (file 2), are AutoCAD files you can use, if you would like to modify them for your own purposes.